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  • Hafnium Silicide AMERICAN ELEMENTS

    Hafnium Silicide is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British

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  • Hafnium(IV) silicate Wikipedia

    Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO 4.. Thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices. The addition of silicon to hafnium oxide increases the band gap, while

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  • US7517515B2 Hafnium silicide target for forming gate

    The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 1.02-2.00 . Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film, and to the manufacturing method thereof.

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  • Hafnium silicide target and manufacturing method for

    Thereby obtained is a hafnium silicide target capable of eliminating the porous structure, and which has a relative density of 95% or more. When the relative density becomes less than 95%, the brittleness deteriorates due to the lack of density, and the workability also deteriorates thereby.

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  • mp-1042: HfSi (orthorhombic, Pnma, 62) Materials Project

    Tags: Hafnium silicon (1/1) Hafnium silicide (1/1) Hafnium silicide It should be noted that ComputedEntries assimilated using the pymatgen.apps.borg package and obtained via the MaterialsProject REST interface using the pymatgen.matproj.rest package will

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  • Electrochemical synthesis of hafnium silicides SpringerLink

    Abstract. The method of cyclic voltammetry was used to study cathodic processes in a molten salt of NaCl-KCl-NaF (10 wt %)-K 2 HfF 6-K 2 SiF 6.The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.

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  • Precise chemical state analyses of ultrathin hafnium films

    Nov 01, 2020· On the other hand, in the case of a Si(100)-2 × 1 substrate, the opposite result was obtained where the metallic Hf component was a major species and different phases of Hf silicides were not clearly observed in either the Hf 4f 5/2, 7/2 or the Si 2p 1/2, 3/2 core-level photoelectron spectra . This result indicates that the Hf/Si(111) system

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  • (PDF) Hafnium silicide formation on Si(100) upon annealing

    obtained with synchrotron radiation will allow better refine-ment in the structure analysis. These hafnium silicide islands were found to grow along three main directions, aligned to the

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  • Initial oxidation processes of ultrathin hafnium film and

    Mar 01, 2020· Metallic hafnium on Si(100) rapidly oxidized, while silicides at interface did not. • After annealing over 1073 K, oxygen atoms were entirely removed from the ultrathin hafnium dioxide. • Dangling bonds on Si(100)-2 × 1 surface with residual hafnium atoms preferentially oxidized because back-bonds of the Si dimers were occupied by hafnium.

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  • (PDF) Charge trapping in ultrathin hafnium silicate/metal

    The slope constants are obtained from the electron and hole tunneling currents versus voltage characteristics on a pair of n-MOS and p-MOS devices in accumulation or an n

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  • (PDF) Hafnium silicide formation on Si(100) upon annealing

    obtained with synchrotron radiation will allow better refine-ment in the structure analysis. These hafnium silicide islands were found to grow along three main directions, aligned to the

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  • Electrochemical synthesis of hafnium silicides SpringerLink

    Abstract. The method of cyclic voltammetry was used to study cathodic processes in a molten salt of NaCl-KCl-NaF (10 wt %)-K 2 HfF 6-K 2 SiF 6.The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.

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  • US5296418A Method for manufacturing a hafnium-containing

    A hafnium-containing silazane polymer is obtained through a polymerization reaction of which the reactants are (A) a halide of an organic silicon compound; (B) a hafnium compound having a the formula: HfX.sub.4 [I] wherein X is chlorine or bromine, and (C) a disilazane having the formula: ##STR1## wherein R 1,R 2 and R 3 may be the same or different and are hydrogen, methyl ethyl, phenyl or

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  • Chemical vapor deposition and characterization of hafnium

    Feb 01, 2008· HfO 2 layers were grown on silicon by metalorganic chemical vapor deposition using (C 5 H 5) 2 Hf(CH 3) 2, (C 5 H 5) 2 Hf(N(C 2 H 5) 2) 2 and Hf(dpm) 4 as volatile precursors and were characterized by IR, XP, ED-spectroscopy, X-ray diffraction, ellipsometry and electrophysical methods. The films were shown to consist of monoclinic HfO 2 and to contain hafnium silicide and silicate at

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  • Improvement in electrical properties of hafnium and

    atmosphere. Open and closed symbols are the data obtained for hafnium silicate and zirconium silicate, respectively. postannealing atmospheres. For both silicates, J becomes smallest in the case of O 2 annealing at E < 3MVcm −1.However,atE > 3MVcm, J is most effectively reduced by the NO annealing. According to ITRS, CMOS devices with a SiO

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  • mp-9938: Hf2Si (tetragonal, I4/mcm, 140)

    Hf2Si is Khatyrkite structured and crystallizes in the tetragonal I4/mcm space group. The structure is three-dimensional. Hf is bonded in a 4-coordinate geometry to four equivalent Si atoms. All Hf–Si bond lengths are 2.80 Å. Si is bonded in a 10-coordinate geometry to eight equivalent Hf and two equivalent Si atoms. Both Si–Si bond lengths are 2.60 Å.

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  • (PDF) Charge trapping in ultrathin hafnium silicate/metal

    The slope constants are obtained from the electron and hole tunneling currents versus voltage characteristics on a pair of n-MOS and p-MOS devices in accumulation or an n

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  • Hafnium (Hf) AMERICAN ELEMENTS

    Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f 14 5d 2 6s 2. In its elemental form, CAS 7440-58-6, hafnium has a steel gray appearance. Hafnium does not exist as a free element in nature.

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  • mp-17216: Hf5Si4 (tetragonal, P4_12_12, 92)

    Hf5Si4 crystallizes in the tetragonal P4_12_12 space group. The structure is three-dimensional. there are three inequivalent Hf sites. In the first Hf site, Hf is bonded to six Si atoms to form corner-sharing HfSi6 octahedra. The corner-sharing octahedral tilt angles are 53°. There are a spread of Hf–Si bond distances ranging from 2.71–2.84 Å.

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  • US4180596A Method for providing a metal silicide layer

    A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to form the metal silicide.

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  • Wirelike growth of self-assembled hafnium suicides: Oxide

    These hafnium silicide islands were found to grow along three main directions, aligned to the symmetry of the (1 1 1) surface. (111)2 × 1 surface. A rich spectrum is obtained in the ratio of

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  • (PDF) Atomic layer deposition of hafnium silicate film for

    spond to hafnium oxide (Hf–O) or hafnium silicide (Hf–Si) bonds, respectively. 34,35. The Si 2p photoelectron spectrum is. presented in Fig. 5(b). threshold swing) obtained from Fig. 9

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  • Hafnium silicide (cas 12401-56-8) SDS(Safety Data Sheet

    Hafnium silicide (CAS No. 12401-56-8) SDS. CAS No: 12401-56-8; Molecular Weight: 234.66; Molecular Formula: HFSI 2; Names and Identifiers Properties Safety and Handling Computational chemical data 12 Suppliers

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  • Hafnium disilicide VWR

    CAS: 12401-56-8 EINECS: 235-640-1 Synonyms: Hafnium silicide

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